Multi-Quantum Well Lateral-Field-Effect Electro-Refraction Modulator
Abstract
We have successfully designed, fabricated, and tested a new electro-optic modulator based on the Lateral Electric Field Induced Refraction (LEFIR) effect. The entire combination of GaAs and AlxGal-xAs layers, including multiple quantum wells and delta-doped planes, were deposited by metalorganic chemical vapor deposition in a single growth run. The modulator was fashioned as a tunable Fabry-Perot Interferometer, with upper and lower stacks of Bragg mirrors enclosing the active spacer region, which contains the quantum wells. It was shown that the basic operating principle for the LEFIR modulator relies on shifting electric charges, which originated in the delta-doped plane, into and out of the series of quantum wells, i.e., the Band Filling Electro-Optic Effect. After successful deposition of individual mirrors, delta-doped planes, and quantum well structures, a complete LEFIR modulator was produced, which exhibited a sharp Fabry-Perot transmission mode at 969 nm. Calculations indicated that the transmission of the device can be shifted from 75% to 5% by the application of about 15 volts bias with the initial structure. In Phase II, we shall seek to optimize the structure, and to progress to two-dimensional arrays of modulators.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 07, 1993
- Accession Number
- ADA264411
Entities
People
- H. P. Maruska