Development of Ultra-Low Noise, High Sensitivity Planar Metal Grating Coupled III-V Multiquantum Well Infrared Detectors for Focal Plane Array Staring IR Sensor Systems
Abstract
To develop ultra-low dark current and high detectivity planar metal grating coupled bound-to-miniband (BTM) III-V quantum well infrared photodetectors (QWIPs) for 8 to 12 um focal plane arrays (FPAs) staring IR sensor systems. To develop novel type-I and type II III-V QWIPs with multicolor, broad and narrow band spectral response in the 8 to 14um wavelength range. The material systems to be studied include GaAS/AlGaAs, AlAs/AlGaAs, InGaP/GaAs (by MOCVD) grown on GaAs substrates and InAlAs/InGaAs (MBE) grown on InP substrate. To conduct theoretical and experimental studies of the planar metal grating coupled structures for normal incidence illumination on QWIPs. Different metal grating coupled structures using 1-D (line) and 2-D (square mesh and dot) metal gratings will be studied in order to achieve high coupling quantum efficiency under normal frontside and backside illuminations on QWIPs. To perform theoretical and experimental studies of dark current, photocurrent, optical absorption, spectral responsivity, noise, and detectivity in different types of QWIPs developed under this program.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1993
- Accession Number
- ADA264465
Entities
People
- Shengsan Li
Organizations
- University of Florida