RF Vacuum Microelectronics
Abstract
We summarize our technical progress towards developing a thin-film edge emitter vacuum transistor capable of 1 GHz modulation. Extensive DC characterization of vacuum triode devices was carded out. Low frequency (1 0 KHz) modulation was demonstrated. Impedance mismatch between the fabricated devices and the test system prevented high frequency measurements. Redesign of the vacuum triodes is planned to achieve the 1 GHz program goal.... Vacuum microelectronics, Edge emitter, Thin film technology, High frequency devices, Triodes.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 07, 1993
- Accession Number
- ADA264528
Entities
People
- Akintunde I. Akinwande
- D. K. Arch
Organizations
- Honeywell International, Inc.