Improved Gallium Nitride and Aluminum Nitride Electronic Materials
Abstract
This report describes the progress in the second year of a three year program to improve the quality of gallium and aluminum nitride electronic materials. In this period we completed surface chemistry equipment modifications and characterization, and began experiments to control and understand the surface reactions associated with the growth of gallium nitride. By subjecting a physisorbed monolayer of trimethyl gallium (TMG) to a cool beam of atomic hydrogen atoms, we successfully converted it to metallic Ga, which is much more reactive with nitriding species, and will result in a more stoichiometric and higher purity gallium nitride. In the materials characterization effort of the program, infrared reflectance spectral and cathodoluminescence spectra were measured for epitaxial AIN films. The reflectance spectra were compared to a Lorentz oscillator model which make it possible to separate out the contribution of the AIN even when the bands of the film and substrate overlapped.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 25, 1993
- Accession Number
- ADA264570
Entities
People
- C. C. Cheng
- H. Gutleben
- John Yates
- Karl-heinz Bornschauer
- M. L. Colaianni
- P. J. Chen
- R. P. Devaty
- S. R. Lucas
- W. D. Partlow
- W. J. Choyke