Diamond Nucleation of Surfaces Using Carbon Clusters

Abstract

Thin solid films of C(60) and C(70) have been used as nucleation layers for the growth of diamond thin films on a variety of substrate surfaces, including metal, insulator and semiconductors. Compared to other forms of carbon, such as graphite, amorphous carbon, soot, etc. it is found that the nucleation density on C(70) is equivalent to that of diamond seeds themselves. On the other hand diamond nucleation of C(60) is less favorable. We argue from our experiments that the reason for C(70) to have such favorable nucleating properties is its chemical stability and geometry. A working model is proposed to explain the nucleation of diamond on solid C(70) films. Application of this work extending to the growth of diamond on a wide range of substrates is also discussed. Diamond nucleation, Carbon clusters.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1993
Accession Number
ADA264634

Entities

People

  • R. J. Meilunas
  • R. P. Chang

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Engineered Resilient Systems

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Kinetics
  • Chemical Reactions
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Coatings
  • Electrons
  • Films
  • Geometry
  • Graphitic Materials
  • Materials
  • Materials Science
  • Organic Chemistry
  • Reaction Mechanisms
  • Spectra
  • Thin Films

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Nanocomposite Materials Science
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene