Surface Chemistry of Hydrogen-Passivated Porous Silicon-Oxidation of Surface Si-H Groups by Acetone
Abstract
The oxidation of hydrogen-passivated porous silicon by acetone at room temperature has been observed by using transmission infrared spectroscopy. After reaction with liquid acetone, two infrared absorption modes at 2253 cm- 1 and 2200 cm-1 develop, and this is accompanied by loss of absorbance of the Si-H stretch modes at 2142 cm-1, 2110 cm-1 and 2089 cm-1. We postulate that oxidation of the surface silicon hydride species by acetone to form (CH3)2HCO-Si-Hx and (CH3)2HCO2Si-Hx species has occurred. This surface reaction may be utilized for passivation of the silicon surface. Silicon, Acetone, Porous silicon, Oxidation, Passivation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 12, 1993
- Accession Number
- ADA264655
Entities
People
- John Yates
- Ling-fen Rao
Organizations
- University of Pittsburgh