Atomic Layer Epitaxy of Semiconductor Heterostructures

Abstract

AlGaP and GaP films were deposited on the (100) Si substrates by Atomic Layer Epitaxy (ALE) in the temperature range between 450 and 600 deg C. Under optimum growth conditions, the growth of GaP and AlGaP was observed to proceed in a two-dimensional (2-D) fashion in the initial growth stages. These ALE-grown films have better surface morphology when compared with the corresponding MOCVD-grown films. With an AlGaP buffer layer grown on Si, the subsequent growth of GaAs on the AlGaP-coated Si substrates tends to proceed 2-D growth. This avoids island growth and the two-step growth process currently used.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1992
Accession Number
ADA264755

Entities

People

  • Salah Bedair

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Crystals
  • Electrical Properties
  • Electron Microscopy
  • Electronics Laboratories
  • Epitaxial Growth
  • Materials
  • Materials Science
  • Microscopy
  • North Carolina
  • Quantum Wells
  • Refractive Index
  • Semiconductors
  • Three Dimensional
  • Transition Temperature
  • Transmission Electron Microscopy
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene