Effects of Hydrogen-Only Interrupts on InGaAs/InP Superlattices Grown by OMVPE

Abstract

Superlattices of InGaAs/InP have been grown by OMVPE using short interval H2-only growth interrupts to eliminate intermixing of hydride gases at the heterojunction interfaces. Changes in lattice strain resulting from interlayer alloying were measured by X-ray diffraction. The changes in strain are small and consistent with decomposition of the surfaces when exposed to the nonequilibrium H2 vapor. Possible interface smoothing is seen with H2 interrupt at the InGaAs to InP transition. A large compressive strain contribution is unaffected by the interrupts and is to As carryover into the InP from surrounding solid deposits rather than the transport gases. Semiconductor technology, Indium phosphide, Electro-optics/electronics, mm-wave, Heterojunction transistors, Monolithic

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1992
Accession Number
ADA264778

Entities

People

  • A. R. Clawson
  • C. M. Hanson
  • S. A. Pappert
  • T. T. Vu

Organizations

  • Naval Command, Control and Ocean Surveillance Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Crystal Growth
  • Crystal Lattices
  • Crystals
  • Diffraction
  • Electronics
  • Electronics Laboratories
  • Gas Flow
  • Heterojunctions
  • Hydrogen
  • Intervals
  • Materials
  • Military Research
  • Quantum Wells
  • Semiconductors
  • Superlattices
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics