Bipolar Junction Transistors Fabricated in Silicon-On-Sapphire

Abstract

The effects of processing temperature on collector leakage current in bipolar junction transistors (BJTs) fabricated in silicon-on-sapphire (SOS) were examined. At low process temperatures (850 deg C) a reduction of five orders of magnitude in the collector leakage current was observed. Excellent I-V characteristics were obtained on both NPN and PNP transistors fabricated at lower temperatures. Measured DC current gain Beta for the NPN devices was 30, and that of the PNP devices was 40. Additionally, current mode logic (CML) circuits fabricated using these transistors exhibited well behaved DC switching characteristics.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1992
Accession Number
ADA264992

Entities

People

  • B. Offord
  • E. N. Cartagena
  • Griselda García

Organizations

  • Naval Command, Control and Ocean Surveillance Center

Tags

DTIC Thesaurus Topics

  • Accumulators
  • Bipolar Junction Transistors
  • Computer Simulations
  • Electronics
  • High Temperature
  • High Voltage
  • Inverters
  • Low Temperature
  • Materials
  • Npn Transistors
  • Ocean Surveillance
  • Pnp Transistors
  • Power Electronics
  • Radiation
  • Sapphire
  • Surveillance
  • Transistors

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology