An Electron Cyclotron Resonance Plasma Process for InP Passivation

Abstract

In-situ ellipsometry has been used to monitor electron cyclotron resonance (ECR) plasma oxidation of InP at room temperature in the shadow plasma between a shutter and the sample. This process leaves no detectable excess P at the Inp-oxide interface. A capping layer of SiO2 was grown by ECR chemical-vapor deposition at a substrate temperature of 150 deg C. The samples were rapid- thermal annealed at 500 deg C for 1 min in an oxygen ambient. The dielectric layers were evaluated by current-voltage and capacitance-voltage measurements on metal-oxide n-type InP capacitors. InP Passivation

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Document Details

Document Type
Technical Report
Publication Date
May 04, 1993
Accession Number
ADA265036

Entities

People

  • Eugene A. Irene
  • Min Li
  • Y. Z. Hu
  • Yaonan Wang

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acquisition
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Cyclotron Resonance
  • Dielectric Films
  • Dielectrics
  • Electrons
  • Heat Treatment
  • Measurement
  • Metal Oxide Semiconductors
  • Military Research
  • North Carolina
  • Oxidation
  • Semiconductors
  • United States
  • Universities

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene