Characterization of the Si/SiO2 Interfere Morphology from Quantum Oscillations in Fowler-Nordheim Tunneling Currents

Abstract

As design rules shrink to conform with ULSI device dimensions, gate dielectrics for MOSFET structures are required to be scaled to below-60A where some properties of the device, such as interface roughness, that are negligible for thicker films become critical. Microroughness at the interface of ultrathin MOS capacitors has been shown to degrade these devices.

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Document Details

Document Type
Technical Report
Publication Date
May 04, 1993
Accession Number
ADA265149

Entities

People

  • Eugene A. Irene
  • J. C. Poler
  • K. K. Mckay

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Reactions
  • Chemistry
  • Conduction Bands
  • Dielectrics
  • Energy Bands
  • Materials
  • Materials Science
  • Military Research
  • North Carolina
  • Oxide Films
  • Physics
  • Scattering
  • Semiconductors
  • Solid State Physics
  • Surface Roughness
  • United States
  • Wave Packets

Readers

  • Integrated Circuit Design and Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing