Thermal-Optical Switching of a Silicon Based Interference Filter

Abstract

We report thermal-optical switching using a silicon based interference filter fabricated by plasma enhanced chemical vapor deposition. A five film structure using high index films of amorphous Si and low index films of SiO2 comprised the device which yielded detector limited 40 ns rise time switching. Operation is in the near infrared spectral region with probe wavelengths of 810 nm and 1.152 micrometers. A 56% contrast ratio is reported when pumped by a 10.6 micrometers C02 pulsed laser. Lover contrast switching-was also demonstrated with a Nd:YAG pumped dye laser tunable from 600-700 nm. In addition, we have demonstrated that atomic layer thickness precision is not necessary, and suggest several improvements which can further enhance device performance. Thermal-optical switching, Silicon.

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Document Details

Document Type
Technical Report
Publication Date
May 04, 1993
Accession Number
ADA265152

Entities

People

  • B. H. Augustine
  • Eugene A. Irene
  • S. T. Feng

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Angle Of Incidence
  • Chemical Vapor Deposition
  • Contrast
  • Detectors
  • Dye Lasers
  • Films
  • Lasers
  • Liquid Dye Lasers
  • Materials
  • North Carolina
  • Optical Switching
  • Precision
  • Pulsed Lasers
  • Quantum Wells
  • Switching
  • Vapor Deposition

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition