Applications of In-Situ Ellipsometry to Microwave Electron Cyclotron Resonance Plasma Processes
Abstract
In-situ static spectroscopic ellipsometry used during a process is a powerful method for characterizing the optical properties and structure of multilayered thin films. However, the commonly practice rotating element ellipsometry takes about 10 min for each spectral measurement. Using only a single wavelength gives less information, but each measurement time reduces to about 5 sec. It is shown that a combination of the techniques was adequate to investigate the plasma processes. Spectroscopic ellipsometry, SE, measurements for Si, Ge, InP, InSb and GaAs showed that for properly selected photon energy ranges, the dependence of the dielectric functions on temperatures minimum while the sensitivity to surface modifications is high. The ECR plasma oxidation of Si is discussed first, since it is the simplest case, and then attention is given to more complex example of ECR plasma ion bombardment induced oxidation and damage in single crystal Ge.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 04, 1993
- Accession Number
- ADA265197
Entities
People
- Eugene A. Irene
- J. Joseph
- Y. Z. Hu
Organizations
- University of North Carolina at Chapel Hill