Investigation of Trap Emission Kinetics MOS Capacitors Using A Pump- Probe Charge Integrating Technique
Abstract
We have developed a Pump-Probe charge integrating measurement technique for studying the emission kinetics of traps in the M/SiO2/Si system. Essentially, an MOS capacitor is pumped by exposure to a charging pulse. The emission of the charge at short time scales (<l0 ms), can be measured using a delayed application of a probe pulse, that determines the remainder of the filled traps as a function of delay time. For MOS capacitors grown on a lightly doped p-Si (lll) substrate we observe an uncommon behavior of the emission kinetics in the initial time regime (<l00 ms). A possible explanations for this phenomena is the perturbation of the emission cross-section of the probed traps due to the presence of another state in communication with the trap site. our results on this system will be presented along with a comparison to other substrate types and processing parameters.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 04, 1993
- Accession Number
- ADA265198
Entities
People
- Eugene A. Irene
- J. C. Poler
Organizations
- University of North Carolina at Chapel Hill