Low Voltage Electron Beam Lithography
Abstract
The contract has three parts covering aspects of high precision electron beam lithography. (1) Comprehensive computer modeling of the electron beam tool. (2) Experimental determination of the properties of sources, columns, and targets, and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1993
- Accession Number
- ADA265358
Entities
People
- R. Browning
- Roger Fabian W. Pease
Organizations
- Stanford University