Low Voltage Electron Beam Lithography

Abstract

The contract has three parts covering aspects of high precision electron beam lithography. (1) Comprehensive computer modeling of the electron beam tool. (2) Experimental determination of the properties of sources, columns, and targets, and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1993
Accession Number
ADA265358

Entities

People

  • R. Browning
  • Roger Fabian W. Pease

Organizations

  • Stanford University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Atoms
  • Backscattering
  • Differential Cross Sections
  • Elastic Scattering
  • Electron Beam Lithography
  • Electron Beams
  • Electron Energy
  • Electron Microscopy
  • Electrons
  • Energy
  • Forward Scattering
  • Monte Carlo Method
  • Numbers
  • Scanning Electron Microscopy
  • Scattering
  • Scattering Cross Sections

Fields of Study

  • Physics

Readers

  • Nanofabrication and Microfabrication.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene