Progress Toward Atomic Layer Epitaxy of Diamond Using Radical Chemistry
Abstract
A novel method for atomic layer epitaxy (ALE) of diamond using radical reactants under medium vacuum conditions is being developed. Precursor molecules are injected into a stream of thermally-dissociated fluorine atoms, generating radicals in a chemically specific way. We have grown diamond particles at rates of approximately 0.1 micrometers/hr on polycrystalline copper and nickel wire substrates seeded by diamond particles from continuous flows of F/F2, H2, and C2H3 or Ch4 at substrate temperatures of 500-600 deg C and reactor pressures between 10(exp-3) and 10(exp-1) Torr. Identification of diamond with submicron lateral resolution was made using electron microprobe x-ray fluroescence wavelength dispersive spectroscopy
Document Details
- Document Type
- Technical Report
- Publication Date
- May 29, 1993
- Accession Number
- ADA265409
Entities
People
- M. P. D'evelyn
- R. Gat
- T. I. Hukka
Organizations
- Rice University