Polymers for Microelectronics
Abstract
A comparative study of polystyrene (PS) with bis(perfluorophenyl) azides 1-2 and the corresponding non-fluorinated bisazides 3-4 as deep-UV resists is reported. Inclusion of as low as 1.2 wt-% of 1 in PS led to 70% retention of film thickness after photolysis and development. PS containing 2.4 wt-% of 1 is > 100 times more sensitive as a deep-UV negative resist than PS itself. The presence of 1 in PS also increased the contrast of the resist. On a molar basis, 1 was about 10 times as effective as non-fluorinated bisazide 3 in cross-linking PS while 2 was about 6 times as effective as 4. PS containing 2.4 wt-% of 1 was found to have a deep-UV sensitivity of 5-10 mJ/sq cm and resolution of about 0.5 micrometer. Polymers, Deep-UV negative resists, Cross-linking.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 10, 1993
- Accession Number
- ADA266036
Entities
People
- J. F. Keana
- M. N. Wybourne
- S. X. Cai
Organizations
- University of Oregon