The Adsorption and Surface Reaction of SiC14 on Si(100)-(2X1)

Abstract

The adsorption and surface reaction of SiCl4 on Si(100)-(2x1) have been investigated in the temperature range of 100K-1000K. Adsorption of monolayer SiCl4 and multilayer SiCl4 are observed by temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS), and electron stimulated desorption ion angular distribution (ESDIAD). Upon heating to approx. 200K and above, Si-Cl bond scission in adsorbed SiCl4 occurs, depositing SiCl(x) species. Heating to 673K leaves the surface with only silicon monochloride species, SiCl(a), exhibiting Si-Cl stretching mode, vSiCl, at approx. 560 cm/cm, and a Cl(+) ESDIAD pattern indicative of inclined Si-Cl bond directions from Cl adsorbed on Si2 dimer sites. Silicon substrate etching occurs above 800K producing SiCl2(g) as the desorption product.

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Document Details

Document Type
Technical Report
Publication Date
May 26, 1993
Accession Number
ADA266124

Entities

People

  • C. C. Cheng
  • J. T. Yates Jr.
  • Q. Geo
  • Wolfgang J. Wolfgang J. Choyke
  • Z. Dohnalek

Organizations

  • University of Pittsburgh

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Chemistry
  • Decomposition
  • Desorption
  • Electron Energy
  • Electronic Mail
  • High Resolution
  • Materials
  • Materials Science
  • Measurement
  • Scattering
  • Silicon Carbide
  • Spectra
  • Spectroscopy
  • Surface Reactions

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Materials Science.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene