An Indium Gallium Arsenide Charge-Coupled Device (CCD) for 1-3 micron Imaging
Abstract
The present program was the most ambitious and had as its primary objective the fabrication of an InGaAs resistive gate CCD with a long term goal of developing 1-3 micrometer InGaAs two dimensional imaging CCDs. The 1-3 micrometer band, at present, is ill-served for imaging. The existence of room temperature imager sensitive to this wavelength range is important for a wide variety of defense, scientific, and commercial applications. Operability at room temperature will allow the camera to be miniaturized, reduce its cost, and increase its ruggedness making it well suited for field applications. As a moderate-sensitivity thermal imager, cameras in this range will be able to detect on-coming vehicles and missiles as well as monitor manufacturing processes. The wavelength band also provides a better match to the natural illumination spectrum of the night sky providing enhance Night Vision capability. When combined with long wavelength (ca. 1.55 micrometer) illumination covert eye-safe surveillance is possible. Finally, one and two dimensional InGaAs arrays will span the gap between silicon based focal plane arrays and CCDs and middle infrared imagers and Fourier spectrometers for near infrared spectroscopic applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 28, 1993
- Accession Number
- ADA266134
Entities
People
- Gregory H. Olsen
- Marshall J. Cohen