Kinetics of Semiconductor Surface Chemistry: Silicon Atomic Layer Processing
Abstract
Surface Kinetics play a crucial role in semiconductor processing chemistry. Our research concentrates on fundamental understanding of microscopic surface kinetics that dictate surface chemistry. We are exploring the various adsorption, decomposition, diffusion and desorption steps in reactions on single-crystal silicon surfaces. These basic time-dependent surface processes are examined using laser induced thermal desorption (LITD) and Fourier transform infrared (FTIR) techniques. These techniques provide direct, quantitative measurements of surface coverage in real-time. Atomic layer processing is a vital need for semiconductor fabrication. As the size of electronic devices approaches the nanometer scale, the need to control growth on an atomic scale is extremely important. For the construction of next generation devices, controlled atomic layer-by-layer processing during oxidation, growth, etching and metallization is critical.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1993
- Accession Number
- ADA266205
Entities
People
- Steven M. George
Organizations
- University of Colorado Boulder