Atomic Layer Epitaxy of Boron Nitride

Abstract

This document summarizes the work performed under the Phase I project aimed at developing the wide bandgap nitrides for high temperature electronics and optoelectronics applications. The focus was on the study of atomic layer epitaxy of BN, AlN and GaN. We present a summary of the program accomplishments. This is followed by a description of the technical effort including the data obtained. Finally we outline a potential Phase II program.

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Document Details

Document Type
Technical Report
Publication Date
Jun 03, 1993
Accession Number
ADA266260

Entities

People

  • M. A. Khan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atomic Layer Epitaxy
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Ceramic Materials
  • Crystals
  • Electron Spectroscopy
  • Electronics
  • Fabrication
  • Field Effect Transistors
  • High Temperature
  • Implantation
  • Ion Implantation
  • Metal-Semiconductor Junctions
  • Reactive Ion Etching
  • Semiconductors
  • Spectra
  • Transistors

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene