Porous Silicon for Pumping Solid-State Lasers

Abstract

Preliminary experiments were performed to investigate the feasibility of using silicon-based sources to pump solid-state lasers. Photoluminescent porous silicon and porous silicon-on-sapphire (SOS) have been fabricated using chemical, electrochemical, and photochemical techniques. An electrochemically fabricated porous silicon sample exhibited 5% quantum efficiency when pumped with 5 mW of 457.9 nm argon ion laser light with a peak emission wavelength of 720 nm. This is consistent with other reports that efficiencies between 1 and 10% have been observed. This room temperature performance exceeds the early development of light emission from III-V semiconductors and suggests that continued research and development of the emission mechanism and optimization of the fabrication process can produce, at the very least, functionally equivalent results in a less expensive material which is amenable to large-scale integration.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1993
Accession Number
ADA266293

Entities

People

  • R. L. Shimabukuro
  • S. D. Russell
  • W. B. Dubbelday

Organizations

  • Naval Command, Control and Ocean Surveillance Center

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Fabrication
  • Laser Diodes
  • Lasers
  • Light Sources
  • Materials
  • Materials Processing
  • Nonlinear Optics
  • Quantum Efficiency
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors
  • Solid State Lasers

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Nanocomposite Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing