Chemical Processes in Silicon and Insulator Growth
Abstract
Below are summarized the significant findings of research carried out under the contract. High temperature annealing of SiO2/Si structures in oxygen- deficient ambients initiates interfacial decomposition of oxide, leading to electrical activation of existing inactive defects. Addition of trace oxygen to the annealing ambient prevents formation of electrical defects; Metal impurities initiate the SiO2/Si interfacial decomposition reaction; Positron annihilation depth profiling is sensitive to defect structures in thermal oxides, possibly associated with intrinsic defect generation which occurs during the thermal oxidation process; and An advanced ultrahigh-vacuum-based multichamber processing and analysis system for CVD and oxidation studies has been designed, fabricated, and demonstrated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1987
- Accession Number
- ADA266300
Entities
People
- B. A. Scott
- B. S. Meyerson
- G. W. Rubloff
- M. L. Yu
Organizations
- IBM Thomas J. Watson Research Center