Quarterly Progress Report 93-1 on Contract N00014-93-1-0705 (Arizona State Univ., Tempe)

Abstract

Silicon-Dioxide as a resist: we have rebuilt the carbon-enhanced vapor etching facility to provide better control over etch rates and uniformity. This has substantially improved the system. We have exposed SiO2 in the electron-beam lithography facility in a process that provides carbon contamination of the sample. It is found that an exposure dose of 100 micron C/ cm2 (roughly one-half that needed for PMMA) provides sufficient carbon to provide a 23:1 differential in the etch rate of the SiO2. We are proceeding now to ascertain the resolution limits that can be obtained (previous work by one of the investigators, D. Allee, showed that direct e-beam damage of SiO2 could achieve 8 nm resolution).

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1993
Accession Number
ADA266301

Entities

People

  • David K. Ferry
  • David R. Allee
  • Michael N. Kozicki

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Electrical Engineering
  • Electron Beam Lithography
  • Electron Beams
  • Electron Spectroscopy
  • Electrons
  • Engineering
  • Fatty Acids
  • Field Effect Transistors
  • Films
  • Hydrofluoric Acid
  • Lithography
  • Oxidation
  • Silicon Dioxide
  • Thin Films

Readers

  • Nanofabrication and Microfabrication.
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene