Single Crystal Diamond Thin Films

Abstract

One possibility for accomplishing growth of single crystal diamond film on a nondiamond substrate is based upon ion implantation of carbon atoms into crystalline copper. In spite of widespread interest in the concept, heteroepitaxial diamond growth by this approach has never been confirmed. The objective of this program is to develop specialized ion implantation capabilities for C+ into Cu processing under conditions for which heteroepitaxial formation of diamond on copper may be feasible. A 200 keV medium current ion implantation system has been modified to allow implantations to be performed into substrates at temperatures up to 1000 deg C, to incorporate background atomic hydrogen in the vicinity of the substrate surface during implantation, and to facilitate in-situ CVD diamond growth processing. Apparatus development has been completed and process investigations have been initiated.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1993
Accession Number
ADA266457

Entities

People

  • Allen Kirkpatrick

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Contracts
  • Corporations
  • Crystal Structure
  • Crystals
  • Diamond Films
  • Films
  • High Temperature
  • Implantation
  • Ion Beams
  • Ion Implantation
  • Ions
  • Military Research
  • Semiconductor Devices
  • Single Crystals
  • Thin Films
  • Vacuum
  • Vacuum Furnaces

Fields of Study

  • Materials science

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.