JSEP Fellowship
Abstract
The graduate work of Thomas J. Rogers culminated in the successful completion of the requirements for a Ph.D., with a graduation date of December 1992, after his submission of the dissertation entitled 'MBE Grown Microcavities for Optoelectronic Devices.' In the dissertation work, the precision of molecular-beam epitaxy (MBE) is taken advantage of in order to grow semiconductor reflectors, microcavities, and quantum wells for studies of vertical-cavity surface-emitting lasers (VCSELs) and the coupling between reflectors and the spatially localized dipoles of semiconductor quantum wells. The design of the structures and the choice of epitaxial growth parameters used for the structures are discussed in detail. Experimental techniques and results are discussed which relate to studies that advance the optoelectronics technology and our understanding of fundamental physics. MBE is used to grow epitaxial structures in which a QW is precisely placed either in close proximity to a DBR, or near the surface of the epitaxial layer, so that a highly reflective mirror can be placed in close proximity to the QW.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 28, 1993
- Accession Number
- ADA266568
Entities
People
- Alvin M. Goodman
- Edward Powers
Organizations
- University of Texas at Austin