Research Laboratory of Electronic Progress Report Number 135.
Abstract
Partial Contents: Solid State Physics, Electronics and Optics: Materials and Fabrication: Heterostructures for High Performance Devices; High- Frequency InAlAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications; Chemical Beam Epitaxy of Compound Semiconductors; Focused Ion Beam Microfabrication; Quantum-Effect Devices; Statistical Mechanics of Quantum Dots; Single Electron Transistors; Differential Resistance Through a Quantum Dot: Signature of Kondo Correlation; Submicron and Nanometer Structures Technology and Research; Optics and Devices: Optics and Quantum Electronics; Optical Propagation and Communication; and High-Frequency (>100 GHz) Electronic Devices
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1993
- Accession Number
- ADA266730
Entities
People
- Daniel Kleppner
- Jonathan Allen
Organizations
- Massachusetts Institute of Technology