Characterization of InTlSb/InSb Grown by Low Pressure Metalorganic Chemical Vapor Deposition on GaAs Substrate

Abstract

Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metalorganic chemical vapor deposition on semi Ga-As substrates-were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of Thallium. Transmission measurements at 77K indicate an absorption shift from 5.5 um for InSb up to 8 um for InTlSb, which is confirmed by photoconductivity measurements.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1993
Accession Number
ADA266878

Entities

People

  • E. Bigan
  • M. Razeghi
  • P. T. Staveteig
  • Y. H. Choi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Absorption Spectra
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Vapor Deposition
  • Coefficients
  • Electron Energy
  • Electron Spectroscopy
  • Electrons
  • Materials
  • Measurement
  • Optical Properties
  • Refractive Index
  • Spectra
  • Spectroscopy
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene