Annual Grant Progress Report (FDP) for Contract N00014-92-J-1757 (University of California)

Abstract

This aims of this research grant has not been modified. The aims are to extend the reliability models for oxide wear out and hot-electron-induced degradation from DC stress to AC stress by arbitrary waveforms as encountered in circuits, to develop a circuit reliability simulator that incorporates the best known reliability models for oxide and hot electrons effects and to develop improved device and reliable oxides. We have set a new world record in silicon transistor --13.5ps at room temperature and at 1.5 volt. This resulted from our research into the design and fabrication of advanced silicon-on-insulator MOS transistors. The goal is to understand the reliability limits of transistor scaling.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1993
Accession Number
ADA266948

Entities

People

  • Chenming Hu

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Boundaries
  • C Programming Language
  • Computer Programming
  • Computer Programs
  • Computers
  • Coordinate Systems
  • Geometry
  • Language
  • Lisp Programming Language
  • Materials
  • Operating Systems
  • Programming Languages
  • Real Numbers
  • Reliability
  • Standards
  • Three Dimensional
  • Topology

Fields of Study

  • Engineering

Readers

  • Academic Conference Management
  • Integrated Circuit Design and Technology.
  • Powder metallurgy of Titanium alloys.

Technology Areas

  • Microelectronics