A Study of High Field Transport in Wide Band Gap Electronic Materials Using a Picosecond Transient Charge Technique

Abstract

We propose a study of electron and hole traps and carrier drift velocity for high electric field strengths using the transient charge technique (TCT) with a picosecond electron beam probe. The uniqueness in the proposed approach lies in the use of a photocathode SEM to generate picosecond electron pulses with high lateral resolution to generate electron hole pairs. Ultrafast electron beam pulses allow narrow drift regions to be characterized and allow high field measurements to be performed without thermal heating. Diamond, Velocity, Time of flight, and Picosecond.

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Document Details

Document Type
Technical Report
Publication Date
Jul 02, 1993
Accession Number
ADA267098

Entities

People

  • Craig J. Scott

Organizations

  • Morgan State University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Electron Beams
  • Electron Holes
  • Electronic Materials
  • Electronics Laboratories
  • Electrons
  • Frequency
  • Materials
  • Measurement
  • Modules (Electronics)
  • Photocathodes
  • Picosecond Time
  • Radiation
  • Semiconductors
  • Silicon Carbide
  • Test Methods
  • Transmission Lines

Fields of Study

  • Physics

Readers

  • Control Systems Engineering.
  • Integrated Circuit Design and Technology.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Directed Energy
  • Microelectronics