A Study of High Field Transport in Wide Band Gap Electronic Materials Using a Picosecond Transient Charge Technique
Abstract
We propose a study of electron and hole traps and carrier drift velocity for high electric field strengths using the transient charge technique (TCT) with a picosecond electron beam probe. The uniqueness in the proposed approach lies in the use of a photocathode SEM to generate picosecond electron pulses with high lateral resolution to generate electron hole pairs. Ultrafast electron beam pulses allow narrow drift regions to be characterized and allow high field measurements to be performed without thermal heating. Diamond, Velocity, Time of flight, and Picosecond.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 02, 1993
- Accession Number
- ADA267098
Entities
People
- Craig J. Scott
Organizations
- Morgan State University