Ion Doped Quantum Well Lasers
Abstract
Synthesis of erbium-doped light-emitting structures will make it possible to fabricate electrically excited ionic lasers whose output frequency is independent of temperature. The emission wavelength is determined by the ionic properties of the dopant rather than by the band structure of the semiconductor. Optical pumping efficiency would be high, as would the electrical pumping efficiency of the semiconductor. Spire's approach to fabrication of the required structure is metalorganic chemical vapor deposition (MOCVD). in this research project, Spire synthesized and tested different metalorganic chemical sources for erbium. An amide compound, trimethyldisilylamino erbium, was found superior to the cyclopentadienyls as it reduced carbon contamination in the final film, without adding nitrogen or silicon contaminants.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1993
- Accession Number
- ADA267198
Entities
People
- Anton C. Greenwald