DLTS and Dynamic Transconductance Analysis of Deep-Submicron Fully- Depleted SOI MOSFET's
Abstract
Progress this period was accomplished in two areas, namely hot electron degradation studies of partially- and fully-depleted transistors, and measurement and analysis of relaxation parameters (generation lifetime) in fully-depleted enhancement and accumulation mode transistors. A summary of the results is given in the attached abstracts: Successive Charging/Discharging of Gate Oxides in SOI MOSFET's by Sequential Hot Electron Stressing of Front/Back Channel and Generation Lifetime Measurements in Fully Depleted Enhancement and Accumulation Mode SOI MOSFET's submitted for presentation in the forthcoming 1993 IEEE SOI Conference, and Sequential Stressing of Front/Back Gate Oxides in SOI MOSFET's for Device Characterization and Applications submitted for presentation in the forthcoming 1993 IEEE IEDM. A presentation was given at INFOS' 93 (8th biennial conference on Insulating Films on Semiconductors) on the topic of Mechanisms of Hot-Carrier Induced Degradation of SOI (SIMOX) MOSFET's . A full length paper on the mechanisms of our hot carrier degradation studies is under preparation for IEEE Transactions on Electron Devices
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1993
- Accession Number
- ADA267291
Entities
People
- Dimitris E. Ioannou
Organizations
- George Mason University