Materials Processing and Manufacturing Technologies for Diamond Substrate Multichip Modules (DSMCM)

Abstract

A detailed surface kinetics mechanism has been developed for the deposition of CH3, C2H2, and C onto a reconstructed (100) diamond surface. The mechanism accounts for the growth of alternating dimer-trough rows. The thermophysical properties of all structures present in the mechanism have been computed using the molecular mechanics program MM3 (92). A diamond growth mechanism on the unreconstructed (100) surface has been used in a stagnation flow model to examine the effect of hydrocarbon injector location and inlet temperature on gas-phase species distributions and diamond growth rate in a DC arcjet reactor system typical of that in use at the Norton Company. It is predicted that there is an optimal injectors location, dictated by operating conditions, that results in maximum concentrations of reactive growth species CH(x), and consequently, in maximum diamond growth rate

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1993
Accession Number
ADA267316

Entities

People

  • David S. Dandy

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Boundary Layer
  • Chemical Engineering
  • Chemical Kinetics
  • Chemical Reactions
  • Chemistry
  • Contracts
  • Flow
  • Fluid Dynamics
  • Geometry
  • Heat Capacity
  • Hydrocarbons
  • Hypobaric Conditions
  • Injectors
  • Kinetics
  • Materials Processing
  • Mechanics
  • Thermophysical Properties

Readers

  • Combustion science or combustion engineering.
  • Materials Science and Engineering.
  • Quantum Chemistry