Pseudomorphic Semiconducting Heterostructures from Combinations of AIN, GaN and Selected SiC Polytypes: Theoretical Advancement and Its Coordination with Experimental Studies of Nucleation, Growth, Characterization and Device Development

Abstract

Solid solutions and pseudomorphic heterostructures of AIN and SiC have been grown on vicinal alpha (6H)-SiC substrates via plasma-assisted, gas- source molecular beam epitaxy at 1050 deg C. Reflection high energy electron diffraction, high resolution TEM and Auger depth profiling show the films to be monocrystalline and to possess the desired chemical compositions. The solid solutions have the wurtzite structure. The multilayers have the following phases: alpha (6H)-SiC substrate, 2H-AIN and 3C-SiC. Chemical interdiffusion between alpha (6H)-SiC wafers and epitaxially deposited 2H-AIN films are under investigation within the temperature range of 1500 deg C to 1700 deg C. Scanning Auger spectroscopy and XTEM is being used to determine the diffusion profiles and the occurrence of new phases. The Auger data and electron energy loss measurements are in disagreement. Additional diffusion and segregation research is under way to resolve this conflict. Superlattices of GaN/AIN on sapphire and SiC have been extensively investigated via HRTEM. Below the critical thickness, AIN only contains threading dislocations emanating from the misfit dislocations; above this thickness, defects parallel to the growth surface greatly increase. Deposition of GaN on sapphire or SiC results in a larger number of threading dislocations caused by the large misfit as well as a high concentration of dislocations parallel to the growth surface. Both types of defects are decreased in density if the GaN is deposited on AIN.... Pseudomorphic structures, 3C-SiC, 6H-SiC, GaN, AIN, Gas-source molecular beam epitaxy, Chemical interdiffusion, Threading dislocations, Misfit dislocations, Critical thickness

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1993
Accession Number
ADA267561

Entities

People

  • K. S. Ailey
  • R. Patterson
  • R. S. Kern
  • Robert F Davis
  • Shuta Tanaka

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Crystal Lattices
  • Crystal Structure
  • Crystallography
  • Crystals
  • Diffraction
  • Electron Microscopy
  • High Resolution
  • Materials
  • Materials Science
  • Measurement
  • Molecular Beam Epitaxy
  • Phase Diagrams
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene