Development of Ultra-Low Noise, High Performance III-V Quantum Well Infrared Photodetectors (QWIPs) for Focal Plane Array Staring Image Sensor Systems
Abstract
During this reporting period we have continued to make excellent progress towards the program goals. We have made a major breakthrough in the development of a new normal incidence p-type strained layer InGaAs/InAlAs QWIP grown on InP by MBE, which achieved both the lowest dark current and highest detectivity ever reported for a QWIP operating at 8.1 um and 77 K. The device dark current at 77 K is one to two orders of magnitude smaller than its 300 K background photocurrent, which shows that this p-type strained layer QWIP is under BLIP operation at 77 K. Other tasks performed during this period include: (1) measured and compared the device dark current with 300 K background limited photocurrent (BLIP) for several QWIPs fabricated from GaAs/AlGaAs, InGaAs/ InAlAs, and AlAs/AlGaAs material systems, (2) designed a broad band 2-D square mesh grating coupler for the dual-mode operation GaAs QWIP to enhance the coupling quantum efficiency and responsivity of this QWIP in the 3-5 and 8-12 um bands, (3) using a 2-D square mesh grating coupler to achieve maximum responsivity for an InGaAs SBTM QWIP, and (4) performed noise characterization on four different types of III-V QWIPs and identified their noise sources. Detailed results and accomplishments are discussed in this report.... Quantum well infrared photodetectors (QWIPs), GaAs/AlGaAs, Strained p-type, InGaAs/ InAlAs, Miniband transport, Intersubband absorption, Dark current, Responsivity, Detectivity, Square mesh metal grating coupler.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1993
- Accession Number
- ADA267715
Entities
People
- Shengsan Li
Organizations
- University of Florida