Low Voltage Electron Beam Lithography

Abstract

The contract has three parts covering aspects of high precision electron beam lithography. (1) Comprehensive computer modeling of the electron beam tool. (2) Experimental determination of the properties of sources, columns, and targets, and (3) The use of silicon single crystals as straightness and orthogonality standards using orientation dependent etching techniques

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1993
Accession Number
ADA267865

Entities

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Electron Beam Lithography
  • Electron Beams
  • Electron Scattering
  • Electrons
  • Emission
  • Field Emission
  • Integrated Systems
  • Ion Beams
  • Lithography
  • Low Voltage
  • Materials
  • Orientation (Direction)
  • Single Crystals
  • Standards
  • Voltage

Fields of Study

  • Physics

Readers

  • Database Systems and Applications
  • Materials Science and Engineering.
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene