Structural Characterization of Epitaxial Layers for Infrared Detectors

Abstract

Initial structural characterization of germanium-silicon epitaxial layers for heterojunction internal photoemission and multiple quantum well infrared detectors has been performed. Cross sectional TEM of multiple quantum wells has been used to confirm period and well thickness measurements performed by other techniques. No defects were observed by TEM in these layers. A variety of other layers including multiple quantum wells on relaxed buffers and heterojunction internal photoemission detector structures have been characterized by defect etching and X-ray diffraction.... Epitaxial, Germanium, Silicon, Infrared.

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Document Details

Document Type
Technical Report
Publication Date
Jun 22, 1993
Accession Number
ADA267875

Entities

People

  • D. W. Greve

Organizations

  • Carnegie Mellon University

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Detectors
  • Diffraction
  • Electronics Laboratories
  • Engineering
  • Epitaxial Growth
  • Heterojunctions
  • Infrared Detectors
  • Jet Propulsion
  • Materials
  • Materials Science
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductors
  • Students
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Quantum Computing