An Alternative Approach to the Growth of Single Crystal Gallium Nitride
Abstract
This project has been primarily concerned with investigating a new approach to the synthesis of epitaxial layers of high purity gallium nitride. The new approach involves the use of hydrazoic acid, HN3, a previously untried precursor as the source of active nitrogen. A new, all-stainless steel apparatus which is UHV compatible, has been constructed. It has been designed to allow growth studies to be made by the chemical beam epitaxy (CBE) technique or by low pressure metal organic vapour phase deposition (LPMOCVD) at pressures up to ca. 1mbar. During the grant period the apparatus has been constructed, tested and modified. Experiments have been carried out which show that gallium nitride and aluminium nitride can be made from the reaction of hydrazoic acid with trimethyl gallium and trimethyl aluminium respectively, at a hot substrate surface. In- situ RHEED patterns and ex-situ Auger spectra and X-ray diffraction data have been obtained. Systematic studies aimed at producing high quality single crystal films have been made. The results are promising and uniform, golden yellow films of gallium nitride can now be produced. RHEED data show that the films are composed of highly orientated crystals. The X-ray results support this, with crystal sizes being at least 1000A with the crystals strongly orientated along the c-axis.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1993
- Accession Number
- ADA267876
Entities
People
- Neville Jonathan
Organizations
- University of Southampton