Diamond Growth on Carbide Surfaces Using a Selective Etching Technique

Abstract

Microwave plasma-enhanced chemical vapor deposition of diamond films on silicon carbide and tungsten carbide (with 6% cobalt) surfaces using fluorocarbon gases has been demonstrated. No diamond powder pre-treatment is necessary to grow these films with a (100) texture. The diamond films are characterized by scanning electron microscopy and Raman spectroscopy. The proposed nucleation and growth mechanism involves concurrent etching of the non- carbon component by atomic fluorine and deposition of diamond. Hydrogen is necessary in the growth process to limit the rapid etching of the substrate by fluorine atoms.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1993
Accession Number
ADA267989

Entities

People

  • K. J. Grannen
  • R. P. Chang

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Carbides
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Diamond Films
  • Electron Microscopy
  • Electrons
  • Films
  • Hydrogen
  • Materials
  • Materials Science
  • Raman Spectroscopy
  • Scanning Electron Microscopy
  • Silicon Carbide
  • Spectroscopy
  • Tungsten Carbides
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene