In-Situ Electron and Optical Spectroscopies of Translational and Vibrational Activated Bond Breaking and Formation on Semiconductors

Abstract

This experimental research program seeks a basic understanding of the growth and processing of materials on semiconductor surfaces. Interactions of molecules with surfaces are investigated by varying the translational and vibrational energies of the impinging molecules from a molecular beam and probing the resulting species on the surface by in-situ time resolved electron energy loss spectroscopy, second harmonic generation, and two-photon photoemission. The reactions of H2, CO, C02, CH(x)F(4-x)(x=0-4), and CH3Cl on Si(100)2xl were studied in order to understand the chemistry of group IV elements: C, Si, and Ge. These studies will be extended to Ge2H6 and Si(111)7x7. The nature of bond breaking and formation of Ge and C on Si to form Ge/Si, SiC, and diamond will be investigated.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 26, 1993
Accession Number
ADA268192

Entities

People

  • Wilson Ho

Organizations

  • Cornell Laboratory of Atomic and Solid State Physics

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Vapor Deposition
  • Desorption
  • Diamond Films
  • Electron Energy
  • Electron Spectroscopy
  • Electrons
  • Elements
  • Energy
  • Hydrogen
  • Materials
  • Molecular Beams
  • Semiconductors
  • Solid State Physics
  • Spectroscopy
  • Vapor Deposition

Readers

  • Materials Science and Engineering.
  • Organic Chemistry
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene