Precise Flux Control for Lattice Matched Superlattice Materials
Abstract
We have investigated flux transients in Molecular Beam Epitaxy (MBE) sources. A detailed study of the relevant factors has been carried out. For the first time Ga transient was measured in the presence of as in a realistic growth environment. Growth rate variation due to transients can be accurately monitored by RHEED analysis. We demonstrated that transients could be minimized or even eliminated by source temperature ramping and mass spectrometer feedback control.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1993
- Accession Number
- ADA268254
Entities
People
- Peter P. Chow