Interface Properties of Wide Bandgap Semiconductor Structures
Abstract
Theoretical studies have involved calculations of the electronic states of hydrogenated surfaces and the properties of defect and impurities in GaN. Infrared studies on diamond films have indicated SiC at the interface and the lack of C-H bonding in the films. To investigate SiC growth, two chambers have been integrated into the surface science facility. Studies of the interdiffusion of SiC-AlN have indicated new results concerning SiC-AlN phase diagrams. The use of ALE for SiC deposited on patterned substrates has been initiated. Low temperature (LT) GaP and InGaP films produced by gas source MBE proved the first demonstration of high resistivity, semi-insulating properties. Using an ALE reactor, layer-by-layer growth of GaN has been demonstrated. The CVD deposition of AlN nitride has been demonstrated on various substrates. A combined photo/cathodo-luminescence system is being assembled. The effects of hydrogen and oxygen on the Schottky barrier of Ni/diamond has been studied, and negative electron affinity effects are observed. The Schottky barrier properties of various metals on clean n-type 6H-SiC have been measured. Approaches have been developed for contacts on GaN and AlN. A reactive ion etching system has been configured for patterning of GaN and AlN films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1993
- Accession Number
- ADA268269
Entities
People
- Robert F Davis
- Robert J. Nemanich
Organizations
- North Carolina State University