Rare Earth Doped III-V Semiconductors for Optoelectronics
Abstract
The overall goal of this Phase I project was to focus on developing procedures for the fabrication and evaluation of epitaxial layers of GaAs which are doped with rare earth (RE) ions of Erbium. The essential elements of the originally proposed approach have been demonstrated through the efforts on this Phase I project. Erbium was successfully incorporated in epitaxially grown Gallium Arsenide (GaAs) and Aluminum-Gallium Arsenide (AlGaAs) by using the Metal Organic Chemical Vapor Deposition (MOCVD) method and using Tris(n- butylcyclopentadienyl)erbium [Er(C4H9C5H4)3] as Er source material. Concentrations of Erbium as high as 10 to the 19 power /cu cm 3 were detected by Secondary Ion Mass Spectroscopy (SIMS). A substantial, though unknown, amount of the Erbium was incorporated in the form of trivalent ions; this was evident by the observation of the characteristic Er(3+) light emission from photoluminescence spectra of our samples.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1993
- Accession Number
- ADA268279
Entities
People
- Victoria T. Coon