RF Vacuum Microelectronics
Abstract
We summarize our technical progress towards developing a thin-film- edge emitter vacuum transistor capable of 1 GHz modulation. Design of the thin- film-edge emitter microwave vacuum transistors was completed this quarter. The first fabrication run of these devices is presently in progress. In addition, the design, assembly and characterization of two prototypes of high frequency probes that will allow on-wafer testing of the vacuum transistors was completed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 06, 1993
- Accession Number
- ADA268317
Entities
People
- Akintunde I. Akinwande
- D. K. Arch
Organizations
- Honeywell International, Inc.