Calculated Room-Temperature Threshold Current Densities for the Visible II-VI ZnCdSe/ZnSe Quantum-Well Diode Lasers

Abstract

Room-temperature threshold current densities for the visible II-VI znCdSe/ZnSe semiconductor quantum-well diode lasers have been calculated using a simple model for the quantum-well gain and spontaneous radiative recombination rate. These results are compared with those for the infrared III-V GaAs/GaAlAs quantum-well lasers, calculated using the same model. By tailoring the epitaxial structure for optimum optical confinement, cw room-temperature operation of the ZnCdSe/ZnSe quantum-well lasers should be possible with threshold current densities as low as 400 A/sq cm for a 1-mm cavity length and uncoated laser facets, assuming the problem of ohmic contacts to the epitaxial structure is resolved.

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Document Details

Document Type
Technical Report
Publication Date
Jun 07, 1993
Accession Number
ADA268369

Entities

People

  • B. Lax
  • J. J. Zayhowski
  • R. L. Aggarwal

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Current Density
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Laser Diodes
  • Lasers
  • Materials
  • Metal-Semiconductor Junctions
  • Quantum Well Lasers
  • Quantum Wells
  • Refractive Index
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Plasma Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Quantum Computing