Laser Probing of the Kinetics and Dynamics of III-V Semiconductor Growth
Abstract
Work is carried out on the dynamics of Ga, In, and As scattering, sticking, and desorption from silicon single crystals using laser induced fluorescence and laser ionization probing of the Ga and In atoms and As atoms, dimers, and tetramers in the gas phase. Desorption kinetics are used to probe the InAs and GaAs heterostructures structures on silicon and the islanding behavior that occurs for the mixed systems. It is observed that islands form readily when In and Ga are grown on a prelayer of As on Si(100. State-resolved detection of As2 species is demonstrated by laser-induced fluorescence probing for the first time. Laser single photon ionization detection of III-V semiconductor species is also demonstrated with high sensitivity and species specific detection. These results are relevant to the epitaxial growth of GaAs and InAs on silicon....Semiconductor, GaAs, InAs, Surface, Laser.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1993
- Accession Number
- ADA268388
Entities
People
- Stephen R. Leone
Organizations
- University of Colorado Boulder