Field-Emitter Arrays for RF Vacuum Microelectronics
Abstract
SRI International has completed the seventh quarter of a program to develop field-emitter arrays for vacuum microelectronics. We have met the first- phase program goals of 5 mA total emission, with a current density of 5 A/cm2 for at least 2 hours and demonstrated modulation of the emission current at a frequency of 1 GHz. A series of controlled tests with photoresist/developer/ stripper combinations continued, and sulfur hexafluoride was identified as the source of a contamination problem in the low-capacitance cathode fabrication technology. The active area of the low-capacitance cathode was shielded from the base electrode to eliminate excessive gate interception of the emitter. The effects of processing on cathode performance were studied through experiments with hydrogen plasma treatment. Four cathodes were set up in a high-frequency chamber in an effort to gain data on the effectiveness of shielding the electrode.... Field-emitter array, Vacuum microelectronics, Low-capacitance cathode.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 09, 1993
- Accession Number
- ADA268397
Entities
People
- A. Rosengreen
- C. A. Spindt
- P. R. Schwoebel
Organizations
- SRI International