Edge-State Tunneling Through Ultrashort Gates

Abstract

The gating of edge states by ultrashort gates (50 nm) placed on normal quantum Hall effect devices is studied. In longer-gate devices, plateaus in the longitudinal resistance are found when an integer number of edge states is reflected from the gate. The expected quantized values of longitudinal resistance do not appear in the ultrashort gate devices, indicating that tunneling of the edge states through the depletion barrier continuously occurs for biases less than that needed to completely deplete the region near the gate.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 15, 1993
Accession Number
ADA268529

Entities

People

  • D. K. Ferry
  • J. M. Ryan
  • N. F. Deutscher

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coefficients
  • Electron Gas
  • Electronics
  • Electrons
  • Fermi Levels
  • Geometry
  • Hall Effect
  • Magnetic Fields
  • Materials
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Tunneling
  • Resistance
  • Solid State Electronics
  • Tunneling
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Educational Psychology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots