Integration of Ferroelectric/Semiconductor Thin Films for SLM and Photorefractive Applications
Abstract
This report covers work on the integration of ferroelectric and semiconductor materials for SLMs carried out over the period of September 24, 1990, through March 23, 1993, in the Ferroelectric Materials Department of the Rockwell International Science Center under Contract No. F49620-90-C-0084. During this period, significant progress has been made in the growth of highly grain-oriented perovskite PZT and BaTiO3 thin films on lattice matched SBN, SrTiO3 and MgO substrates. The oriented PZT films show high polarization in the range of 30 - 38 microcoul/Sq cm, indicating the strong electro-optic effect necessary for photorefractive applications. This report also includes the growth of individual PZT and SBN:75 thin films on semiconducting Si substrates and the successful fabrication of ferroelectric multilayers consisting of alternating PZT and SBN films for spatial light modulators (SLMs). Because excellent quality and optical property PZT, BaTiO3 and multilayer (consisting of PZT and SBN) films are now available, a wide range of optical devices are currently under investigation. Under this program, we are concentrating SLM applications at UCSD using the multilayer stack films; while photorefractive applications are being developed at Rockwell using the grain-oriented PZT and BaTiO3 films deposited on SBN substrates
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 09, 1993
- Accession Number
- ADA268645
Entities
People
- R. R. Neurgaonkar