Nitridation of GaAs(100) by Laser-Induced Decomposition of HN3.
Abstract
GaAs can be readily nitridated at low temperatures by photolysis of adsorbed HN3 at 308 nm. The annealing of the exposed and photolyzed samples at 450 K, GaN, AsN and bridged AsNGa species were detected by HREELS and XPS. Further annealing at 780 K caused the desorption of most AsN species while GaN and AsNGa nitrides remained on the surface. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1993
- Accession Number
- ADA269147
Entities
People
- Lin Ming-chang
- Yuheng Bu
Organizations
- Emory University